Conformal Passivation of Multi-Channel GaN Power Transistors for Reduced Current Collapse

Multi-channel power devices, in which several AlGaN/GaN layers are stacked to achieve multiple two-dimensional electron gases (2DEGs), have recently led a significant increase the device conductivity while maintaining high breakdown voltage, resulting excellent DC performances. However, their dynamic performance is yet be demonstrated, especially due absence of an effective passivation technique for 3D structure. Here, we present surface technology multi-channel devices based on conformal deposition thin SiO 2 interlayer followed by low-pressure chemical vapor (LPCVD) Si xmlns:xlink="http://www.w3.org/1999/xlink">3 N xmlns:xlink="http://www.w3.org/1999/xlink">4 layer around fins, enables effectively reduce traps both at AlGaN top and fin sidewalls. Such approach reduction on-resistance (RON) under large off-state voltages 350 V comparable with passivated single-channel reference devices. This work proves that, addition performance, can offer reduced current collapse, unveiling potential this platform future electronic applications.